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Início > Transistores > Transistor S9012 PNP

Transistor S9012 PNP

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Descrição

Transistor S9012
– Tensão coletor-emissor Vceo: -25VDC
– Tensão coletor-base Vcbo: -40VDC
– Tensão emissor-base Vebo: -5VDC
– Corrente coletor Ic: -500mA
– Encapsulamento: TO-92
– Temperatura de operação: -55 a 150°C

– Temperatura de operação: -55 a 150°CAbsolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ........................................................................................................... -
55~+150
°
C
Junction Temperature ................................................................................................. +150
°
C Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C).............................................................................................. 625mW
•
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage.................................................................................................
..... 40 V
VCEO Collector to Emitter Voltage................................................................................................... 20 V
VEBO Emitter to Base Voltage...................................................................................................
........ 5 V
IC Collector Current ...........................................................................................................
......... 500 mA
Icp Base Current ...............................................................................................................
.......... 100 mAAbsolute Maximum Ratings
•
MaAbsolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ........................................................................................................... -
55~+150
°
C
Junction Temperature ................................................................................................. +150
°
C Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C).............................................................................................. 625mW
•
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage.................................................................................................
..... 40 V
VCEO Collector to Emitter Voltage................................................................................................... 20 V
VEBO Emitter to Base Voltage...................................................................................................
........ 5 V
IC Collector Current ...........................................................................................................
......... 500 mA
Icp Base Current ...............................................................................................................
.......... 100 mAmum Temperatures
Storage Temperature ........................................................................................................... -
55~+150
°
C
Junction Temperature ................................................................................................. +150
°
C Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C).............................................................................................. 625mW
•
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage.................................................................................................
..... 40 V
VCEO Collector to Emitter Voltage................................................................................................... 20 V
VEBO Emitter to Base Voltage...................................................................................................
........ 5 V
IC Collector Current ...........................................................................................................
......... 500 mA
Icp Base Current ...............................................................................................................
.......... 100 mA